attenuators - analog - chip 1 1 - 2 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc346 gaas mmic voltage-variable attenuator, dc - 20 ghz v04.1008 general description features functional diagram wide bandwidth: dc - 20 ghz low phase shift vs. attenuation 32 db attenuation range die size: 0.85 x 0.85 x 0.1 mm electrical specifi cations, t a = +25 c, 50 ohm system typical applications this attenuator is ideal for use as a vva for dc - 20 ghz applications: ? point-to-point radio ? vsat radio the hmc346 die is an absorptive voltage variable attenuator (vva) operating from dc - 20 ghz. it features an on-chip reference attenuator for use with an external op-amp to provide simple single voltage attenuation control, 0 to -3v. the device is ideal in designs where an analog dc control signal must control rf signal levels over a 30 db amplitude range. for plastic packaged version, see the hmc346ms8g which operates from dc - 8 ghz. parameter min. typ. max. units insertion loss dc - 12 ghz: dc - 20 ghz: 1.7 2.2 2.3 2.8 db db attenuation range dc - 12 ghz: dc - 20 ghz: 27 22 32 25 db db return loss dc - 12 ghz: 12 - 20 ghz: 6 10 10 15 db db switching characteristics trise, tfall (10/90% rf): ton, toff (50% ctl to 10/90% rf): 2 8 ns ns input power for 0.25 db compression (0.5 - 20 ghz) min. atten: atten. >2 db: +8 +4 dbm dbm input third order intercept (0.5 - 20 ghz) (two-tone input power = -8 dbm each tone) min. atten: atten. >2 db: +25 +10 dbm dbm
attenuators - analog - chip 1 1 - 3 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com relative attenuation relative attenuation vs. control voltage @ 10 ghz insertion loss vs. temperature return loss vs. attenuation relative phase relative attenuation vs. control voltage @ 20 ghz -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0 5 10 15 20 25 +25 c -55 c +85 c insertion loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 attenuation (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 min 5 db max return loss (db) frequency (ghz) -3 -2.5 -2 -1.5 -1 -0.5 0 0 5 10 15 20 25 30 v1 +25 c v1 -55 c v1 +85 c v2 +25 c v2 -55 c v2 +85 c control voltage (vdc) relative attenuation (db) 0 40 80 120 160 200 240 0 5 10 15 20 25 5 db 10 db 15 db 20 db 25 db 30 db max relative phase (deg) frequency (ghz) -3 -2.5 -2 -1.5 -1 -0.5 0 0 5 10 15 20 25 v1 +25 c v1 -55 c v1 +85 c v2 +25 c v2 -55 c v2 +85 c control voltage (vdc) relative attenuation (db) hmc346 v04.1008 gaas mmic voltage-variable attenuator, dc - 20 ghz
attenuators - analog - chip 1 1 - 4 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com *two-tone input power = -8 dbm each tone, 1 mhz spacing. input 0.25 db compression vs. attenuation input 1 db compression vs. attenuation second harmonic vs. attenuation* input ip3 vs. attenuation* input ip2 vs. attenuation* absolute maximum ratings rf input power +18 dbm control voltage range +1 to -5 vdc storage temperature -65 to +150 c operating temperature -55 to +85 c esd sensitivity (hbm) class 1a electrostatic sensitive device observe handling precautions 0 5 10 15 20 25 30 0 5 10 15 20 0 db 3 db 6 db 10 db ip3 (dbm) frequency (ghz) 10 20 30 40 50 60 70 0 5 10 15 20 0 db 3 db 6 db 10 db ip2 (dbm) frequency (ghz) -10 -5 0 5 10 15 0 5 10 15 20 0 db (ref) 6 db 0.25 db (dbm) frequency (ghz) -5 0 5 10 15 20 0 5 10 15 20 0 db (ref) 6 db p1db (dbm) frequency (ghz) 20 30 40 50 60 70 80 0 5 10 15 20 0 db 3 db 6 db 10 db second harmonic (dbc) frequency (ghz) hmc346 v04.1008 gaas mmic voltage-variable attenuator, dc - 20 ghz
attenuators - analog - chip 1 1 - 5 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing 1. all dimensions are in inches (millimeters). 2. typical bond pad is .004 square. 3. typical bond pad spacing is .006 center to center except as noted. 4. backside metalization: gold 5. backside metal is ground 6. bond pad metalization: gold pad number function description interface schematic 1, 2 rf1 input, rf2 output this pad is dc coupled and matched to 50 ohm. blocking capacitors are required if rf line potential is not equal to 0v. 3, 6 v2, v1 control input (master). 4 i control input (slave). 5 500 this pad must be dc grounded. gnd die bottom must be connected to rf ground. pad descriptions die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc346 v04.1008 gaas mmic voltage-variable attenuator, dc - 20 ghz
attenuators - analog - chip 1 1 - 6 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com external op-amp control circuit maintains impedance match while attenuation is varied. input control ranges from 0 volts (min. attenuation) to -3.0 volts (max. attenuation.) single-line control driver assembly diagram hmc346 v04.1008 gaas mmic voltage-variable attenuator, dc - 20 ghz
attenuators - analog - chip 1 1 - 7 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc346 v04.1008 gaas mmic voltage-variable attenuator, dc - 20 ghz
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